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| MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP) MPS6602 and MPS6652 are Preferred Devices Amplifier Transistors Features * Voltage and Current are Negative for PNP Transistors * Pb-Free Packages are Available* MAXIMUM RATINGS Rating Collector -Emitter Voltage MPS6601/6651 MPS6602/6652 Collector -Base Voltage MPS6601/6651 MPS6602/6652 Emitter -Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg VCBO 25 30 4.0 1000 625 5.0 1.5 12 -55 to +150 Vdc mAdc W mW/C W mW/C C Symbol VCEO 25 40 Vdc Value Unit Vdc 2 BASE http://onsemi.com COLLECTOR 3 2 BASE NPN 1 EMITTER PNP 1 EMITTER COLLECTOR 3 1 2 3 TO-92 CASE 29-11 STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Ambient (Note 1) Thermal Resistance, Junction-to-Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. RqJA is measured with the device soldered into a typical printed circuit board. MPS 66xy AYWW G G MPS66xy = Device Code x = 0 or 5 y = 1 or 2 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 Preferred devices are recommended choices for future use and best overall value. 1 June, 2006 - Rev. 4 Publication Order Number: MPS6601/D MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP) ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector -Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter -Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 25 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) Collector Cutoff Current (VCB = 25 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1000 mAdc, VCE = 1.0 Vdc) Collector -Emitter Saturation Voltage (IC = 1000 mAdc, IB = 100 mAdc) Base-Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) SMALL- SIGNAL CHARACTERISTICS Current -Gain -- Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 40 Vdc, IC = 500 mAdc, IB1 = 50 mAdc, tp w 300 ns Duty Cycle) td tr ts tf - - - - 25 30 250 50 ns ns ns ns fT Cobo 100 - - 30 MHz pF hFE 50 50 30 VCE(sat) VBE(on) - - - - - 0.6 1.2 Vdc Vdc - MPS6601/6651 MPS6602/6652 ICBO MPS6601/6651 MPS6602/6652 - - 0.1 0.1 V(BR)CEO MPS6601/6651 MPS6602/6652 V(BR)CBO MPS6601/6651 MPS6602/6652 V(BR)EBO ICES - - 0.1 0.1 mAdc 25 40 4.0 - - - Vdc mAdc 25 40 - - Vdc Vdc Symbol Min Max Unit http://onsemi.com 2 MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 P(pk) SINGLE PULSE 0.01 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 RqJC(t) = (t) qJC RqJC = 100C/W MAX RqJA(t)d = r(t) qJA RqJA = 357C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 10 20 50 100 0.1 0.05 0.07 0.02 0.05 0.03 0.02 0.01 0.001 t, TIME (SECONDS) Figure 1. Thermal Response TURN-ON TIME -1.0 V VCC +40 V RL OUTPUT Vin tr = 3.0 ns 5.0 mF 100 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities RB * CS t 6.0 pF Vin 5.0 mF TURN-OFF TIME +VBB VCC +40 V 100 RB * CS t 6.0 pF 100 RL OUTPUT 5.0 ms +10 V 0 100 Figure 2. Switching Time Test Circuits http://onsemi.com 3 MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP) NPN 300 200 h FE , CURRENT GAIN h FE , CURRENT GAIN 100 70 50 VCE = -1.0 V TJ = 25C 200 PNP 100 70 50 30 VCE = 1.0 V TJ = 25C 10 100 IC, COLLECTOR CURRENT (mA) 1000 20 -10 -100 IC, COLLECTOR CURRENT (mA) -1000 Figure 3. MPS6601/6602 DC Current Gain Figure 4. MPS6651/6652 DC Current Gain f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz) 300 200 f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz) 300 200 100 70 50 30 VCE = 10 V TJ = 25C f = 30 MHz 10 100 200 1000 100 70 50 30 -10 VCE = -10 V TJ = 25C f = 30 MHz -100 -200 -1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Current Gain Bandwidth Product Figure 6. Current Gain Bandwidth Product 1.0 TJ = 25C -1.0 VBE(SAT) @ IC/IB = 10 -0.8 VBE(ON) @ VCE = 1.0 V V, VOLTAGE (VOLTS) TJ = 25C VBE(SAT) @ IC/IB = 10 0.8 V, VOLTAGE (VOLTS) 0.6 -0.6 VBE(ON) @ VCE = -1.0 V 0.4 0.2 0 1.0 -0.4 VCE(SAT) @ IC/IB = 10 -0.2 0 -1.0 VCE(SAT) @ IC/IB = 10 10 100 1000 -10 -100 -1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. On Voltages Figure 8. On Voltages http://onsemi.com 4 MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP) NPN 80 TJ = 25C 60 120 160 PNP TJ = 25C C, CAPACITANCE (pF) C, CAPACITANCE (pF) 40 Cib 80 Cib 40 Cob Cob Cib -5.0 -1.0 -15 -20 -10 -2.0 -3.0 -4.0 VR, REVERSE VOLTAGE (VOLTS) -25 -5.0 20 Cob 5.0 1.0 15 20 10 2.0 3.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 25 5.0 0 Cob Cib 0 Figure 9. Capacitance Figure 10. Capacitance 10 VCE = 5.0 V f = 1.0 kHz TA = 25C IC = 100 mA 10 VCE = -5.0 V f = 1.0 kHz TA = 25C NF, NOISE FIGURE (dB) 6.0 NF, NOISE FIGURE (dB) 8.0 8.0 6.0 4.0 IC = 100 mA 4.0 2.0 0 2.0 0 10 100 1k 10 k 10 100 1k 10 k Rs, SOURCE RESISTANCE (OHMS) Rs, SOURCE RESISTANCE (OHMS) Figure 11. MPS6601/6602 Noise Figure Figure 12. MPS6651/6652 Noise Figure 10 k 5k 3k 1k 500 200 100 50 20 10 10 20 50 100 200 tf tr td 500 1000 td @ VBE(off) = 0.5 V VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25C ts 10 k 5k 3k 1k 500 200 100 50 20 10 -10 -20 -50 -100 -200 tf tr td -500 -1000 IC, COLLECTOR CURRENT (mA) ts td @ VBE(off) = -0.5 V VCC = -40 V IC/IB = 10 IB1 = IB2 TJ = 25C t, TIME (NS) IC, COLLECTOR CURRENT (mA) Figure 13. MPS6601/6602 Switching Times t, TIME (NS) Figure 14. MPS6651/6652 Switching Times http://onsemi.com 5 MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP) NPN R qVB , TEMPERATURE COEFFICIENT (mV/ C) R qVB , TEMPERATURE COEFFICIENT (mV/ C) -0.8 -0.8 PNP -1.2 -1.2 -1.6 RqVB for VBE -2.0 -1.6 -2.0 RqVB for VBE -2.4 -2.8 1.0 -2.4 -2.8 -1.0 10 100 1000 -10 -100 -1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 15. Base-Emitter Temperature Coefficient Figure 16. Base-Emitter Temperature Coefficient 1k I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) 500 200 100 50 20 10 MPS6601 MPS6602 TC = 25C 1.0 s 1.0 MS -1 k -500 -200 -100 -50 -20 -10 -1.0 -2.0 MPS6651 MPS6652 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -20 -40 TC = 25C 1.0 s 1.0 MS CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1.0 2.0 5.0 10 20 40 VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 17. Safe Operating Area Figure 18. Safe Operating Area 1.0 VCE , COLLECTOR VOLTAGE (VOLTS) VCE , COLLECTOR VOLTAGE (VOLTS) TJ = 25C 0.8 -1.0 TJ = 25C -0.8 0.6 IC = 1000 mA 0.4 0.2 0 IC = 50 mA IC = 100 mA IC = 500 mA IC = 250 mA 1.0 IB, BASE CURRENT (mA) 10 100 -0.6 IC = -1000 mA IC = -500 mA IC = -250 mA -10 -100 -0.4 IC = -50 mA IC = -100 mA -0.2 0 -0.01 IC = 10 mA 0.01 0.1 IC = -10 mA -0.1 -1.0 IB, BASE CURRENT (mA) Figure 19. MPS6601/6602 Saturation Region Figure 20. MPS6651/6652 Saturation Region http://onsemi.com 6 MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP) ORDERING INFORMATION Device MPS6601 MPS6601G MPS6601RLRA MPS6601RLRAG MPS6602 MPS6602G MPS6602RLRA MPS6602RLRAG MPS6651 MPS6651G MPS6652 MPS6652G MPS6652RLRA MPS6652RLRAG MPS6652RLRP MPS6652RLRPG Package TO-92 (TO-226) TO-92 (TO-226) (Pb-Free) TO-92 (TO-226) TO-92 (TO-226) (Pb-Free) TO-92 (TO-226) TO-92 (TO-226) (Pb-Free) TO-92 (TO-226) TO-92 (TO-226) (Pb-Free) TO-92 (TO-226) TO-92 (TO-226) (Pb-Free) TO-92 (TO-226) TO-92 (TO-226) (Pb-Free) TO-92 (TO-226) TO-92 (TO-226) (Pb-Free) TO-92 (TO-226) TO-92 (TO-226) (Pb-Free) 2000 Units / Tape & Ammo Box 2000 Units / Tape & Reel 5000 Units / Box 5000 Units / Box 2000 Units / Tape & Reel 5000 Units / Box 2000 Units / Tape & Reel 5000 Units / Box Shipping For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 7 MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP) PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- K XX G H V 1 D J C SECTION X-X N N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 8 MPS6601/D |
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